IRFD020PBF
| Parameters | |
|---|---|
| Turn On Delay Time | 8.7 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 100m Ω @ 1.4A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 2.4A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V |
| Factory Lead Time | 1 Week |
| Rise Time | 55ns |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Drain to Source Voltage (Vdss) | 50V |
| Package / Case | 4-DIP (0.300, 7.62mm) |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Operating Temperature | -55°C~150°C TJ |
| Vgs (Max) | ±20V |
| Packaging | Tube |
| Published | 2012 |
| Fall Time (Typ) | 26 ns |
| Turn-Off Delay Time | 16 ns |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Continuous Drain Current (ID) | 2.4A |
| Number of Terminations | 3 |
| Threshold Voltage | 4V |
| ECCN Code | EAR99 |
| Resistance | 100mOhm |
| Gate to Source Voltage (Vgs) | 20V |
| Subcategory | FET General Purpose Power |
| Drain to Source Breakdown Voltage | 60V |
| Technology | MOSFET (Metal Oxide) |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
| Terminal Position | DUAL |
| RoHS Status | ROHS3 Compliant |
| Pin Count | 3 |
| JESD-30 Code | R-PDIP-T3 |
| Lead Free | Lead Free |
| Number of Elements | 1 |
| Power Dissipation-Max | 1W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.3W |
See Relate Datesheet
