Parameters | |
---|---|
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 16 ns |
Turn-Off Delay Time | 15 ns |
Continuous Drain Current (ID) | 1A |
Threshold Voltage | 4V |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 1A |
Drain to Source Breakdown Voltage | 100V |
Dual Supply Voltage | 100V |
Recovery Time | 200 ns |
Max Junction Temperature (Tj) | 175°C |
Nominal Vgs | 4 V |
Height | 4.57mm |
Length | 5mm |
Width | 6.29mm |
REACH SVHC | Unknown |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | 4-DIP (0.300, 7.62mm) |
Number of Pins | 4 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2008 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Resistance | 540mOhm |
Voltage - Rated DC | 100V |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Current Rating | 1A |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 4 |
JESD-30 Code | R-PDIP-T3 |
Qualification Status | Not Qualified |
Lead Pitch | 2.54mm |
Number of Elements | 1 |
Row Spacing | 7.62 mm |
Number of Channels | 1 |
Power Dissipation-Max | 1.3W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 1.3W |
Case Connection | DRAIN |
Turn On Delay Time | 6.9 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 540m Ω @ 600mA, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 180pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 1A Ta |
Gate Charge (Qg) (Max) @ Vgs | 8.3nC @ 10V |
Rise Time | 16ns |