Parameters | |
---|---|
DS Breakdown Voltage-Min | 80V |
RoHS Status | Non-RoHS Compliant |
Mounting Type | Through Hole |
Package / Case | 4-DIP (0.300, 7.62mm) |
Surface Mount | NO |
Transistor Element Material | SILICON |
Packaging | Tube |
JESD-609 Code | e0 |
Pbfree Code | no |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Terminal Finish | TIN LEAD |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | R-PDIP-T3 |
Qualification Status | COMMERCIAL |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 270m Ω @ 780mA, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 360pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 1.3A Ta |
Gate Charge (Qg) (Max) @ Vgs | 16nC @ 10V |
Drain to Source Voltage (Vdss) | 100V |
Drain Current-Max (Abs) (ID) | 1.1A |
Drain-source On Resistance-Max | 0.4Ohm |