IRFD9010PBF
| Parameters | |
|---|---|
| Min Operating Temperature | -55°C |
| Voltage - Rated DC | -50V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | -1.1A |
| Power Dissipation-Max | 1W Tc |
| Element Configuration | Single |
| Power Dissipation | 1W |
| Turn On Delay Time | 6.1 ns |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 580mA, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 240pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 1.1A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 10V |
| Rise Time | 47ns |
| Drain to Source Voltage (Vdss) | 50V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 39 ns |
| Turn-Off Delay Time | 13 ns |
| Continuous Drain Current (ID) | -1.1A |
| Threshold Voltage | -4V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 50V |
| Input Capacitance | 240pF |
| Drain to Source Resistance | 350mOhm |
| Rds On Max | 500 mΩ |
| Height | 3.3782mm |
| Length | 6.2738mm |
| Width | 5.0038mm |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | 4-DIP (0.300, 7.62mm) |
| Number of Pins | 4 |
| Supplier Device Package | 4-DIP, Hexdip, HVMDIP |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2010 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
See Relate Datesheet
