IRFD9020PBF
| Parameters | |
|---|---|
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Resistance | 280mOhm |
| Additional Feature | AVALANCHE RATED |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Pin Count | 4 |
| Number of Elements | 1 |
| Power Dissipation-Max | 1.3W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.3W |
| Turn On Delay Time | 13 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 280m Ω @ 960mA, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1μA |
| Input Capacitance (Ciss) (Max) @ Vds | 570pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 1.6A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 19nC @ 10V |
| Rise Time | 68ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 29 ns |
| Turn-Off Delay Time | 15 ns |
| Continuous Drain Current (ID) | 1.6A |
| Threshold Voltage | -4V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 60V |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | 4-DIP (0.300, 7.62mm) |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2005 |
See Relate Datesheet
