IRFD9120PBF
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | 4-DIP (0.300, 7.62mm) |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2011 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Resistance | 600mOhm |
| Additional Feature | AVALANCHE RATED |
| Voltage - Rated DC | -100V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Current Rating | -1A |
| Pin Count | 4 |
| Number of Elements | 1 |
| Power Dissipation-Max | 1.3W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.3W |
| Case Connection | DRAIN |
| Turn On Delay Time | 9.6 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 600m Ω @ 600mA, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 390pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 1A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V |
| Rise Time | 29ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 29 ns |
| Turn-Off Delay Time | 21 ns |
| Continuous Drain Current (ID) | -1A |
| Threshold Voltage | -4V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 1A |
| Drain to Source Breakdown Voltage | 100V |
| Pulsed Drain Current-Max (IDM) | 8A |
| Recovery Time | 200 ns |
| Nominal Vgs | -4 V |
| Height | 3.3782mm |
| Length | 6.2738mm |
| Width | 5.0038mm |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
