IRFH4210TRPBF
| Parameters | |
|---|---|
| Rise Time | 44ns |
| Drain to Source Voltage (Vdss) | 25V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 15 ns |
| Turn-Off Delay Time | 24 ns |
| Continuous Drain Current (ID) | 45A |
| Threshold Voltage | 1.6V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 900μm |
| Length | 6mm |
| Width | 5mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Number of Pins | 5 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2015 |
| Series | HEXFET® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Resistance | 1.1MOhm |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Power Dissipation-Max | 3.6W Ta 104W Tc |
| Element Configuration | Single |
| Power Dissipation | 3.6W |
| Turn On Delay Time | 20 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 1.35m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id | 2.1V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds | 4812pF @ 13V |
| Current - Continuous Drain (Id) @ 25°C | 45A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 74nC @ 10V |
See Relate Datesheet
