IRFH4253DTRPBF
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Number of Pins | 8 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| Series | HEXFET® |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 50W |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Power - Max | 31W 50W |
| FET Type | 2 N-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 3.2m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id | 2.1V @ 35μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1314pF @ 13V |
| Current - Continuous Drain (Id) @ 25°C | 64A 145A |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 25V |
| Continuous Drain Current (ID) | 145A |
| Threshold Voltage | 1.6V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 35A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Height | 900μm |
| Length | 6mm |
| Width | 5mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
