Parameters | |
---|---|
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-PowerTDFN |
Number of Pins | 8 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2012 |
Series | HEXFET® |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 5 |
ECCN Code | EAR99 |
Resistance | 55MOhm |
Terminal Finish | Matte Tin (Sn) |
Additional Feature | HIGH RELIABILITY |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
JESD-30 Code | R-PDSO-N5 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Number of Channels | 1 |
Power Dissipation-Max | 3.6W Ta 8.3W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 3.6W |
Case Connection | DRAIN |
Turn On Delay Time | 9.3 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 55m Ω @ 7.5A, 10V |
Vgs(th) (Max) @ Id | 5V @ 150μA |
Input Capacitance (Ciss) (Max) @ Vds | 2290pF @ 100V |
Current - Continuous Drain (Id) @ 25°C | 5.1A Ta |
Gate Charge (Qg) (Max) @ Vgs | 54nC @ 10V |
Rise Time | 7.7ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 6 ns |
Turn-Off Delay Time | 21 ns |
Continuous Drain Current (ID) | 5.1A |
Threshold Voltage | 5V |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 43A |
Drain to Source Breakdown Voltage | 200V |
Pulsed Drain Current-Max (IDM) | 63A |
Avalanche Energy Rating (Eas) | 320 mJ |
Max Junction Temperature (Tj) | 150°C |
Height | 1.05mm |
Length | 6mm |
Width | 5mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |