IRFH5220TRPBF
| Parameters | |
|---|---|
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| JESD-30 Code | R-PDSO-N5 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 3.6W Ta 8.3W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 3.6W |
| Case Connection | DRAIN |
| Turn On Delay Time | 7.2 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 99.9m Ω @ 5.8A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1380pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 3.8A Ta 20A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
| Rise Time | 4.7ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 3.4 ns |
| Turn-Off Delay Time | 14 ns |
| Continuous Drain Current (ID) | 3.8A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 20A |
| Drain-source On Resistance-Max | 0.0999Ohm |
| Drain to Source Breakdown Voltage | 200V |
| Pulsed Drain Current-Max (IDM) | 47A |
| Avalanche Energy Rating (Eas) | 290 mJ |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-VQFN Exposed Pad |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2010 |
| Series | HEXFET® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
See Relate Datesheet
