IRFH7004TRPBF
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-VQFN Exposed Pad |
| Number of Pins | 5 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| Series | HEXFET®, StrongIRFET™ |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Number of Elements | 1 |
| Power Dissipation-Max | 156W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 156W |
| Case Connection | DRAIN |
| Turn On Delay Time | 15 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 1.4m Ω @ 100A, 10V |
| Vgs(th) (Max) @ Id | 3.9V @ 150μA |
| Input Capacitance (Ciss) (Max) @ Vds | 6419pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 100A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 194nC @ 10V |
| Rise Time | 51ns |
| Drain to Source Voltage (Vdss) | 40V |
| Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 49 ns |
| Turn-Off Delay Time | 73 ns |
| Continuous Drain Current (ID) | 100A |
| Threshold Voltage | 3V |
| Gate to Source Voltage (Vgs) | 20V |
| DS Breakdown Voltage-Min | 40V |
| Nominal Vgs | 3 V |
| Height | 850μm |
| Length | 6mm |
| Width | 5mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
