Parameters | |
---|---|
Vgs (Max) | ±20V |
Fall Time (Typ) | 34 ns |
Turn-Off Delay Time | 64 ns |
Continuous Drain Current (ID) | 100A |
Threshold Voltage | 3.9V |
Gate to Source Voltage (Vgs) | 20V |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-PowerTDFN |
Number of Pins | 8 |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2007 |
Series | HEXFET® |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN Code | EAR99 |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Number of Channels | 1 |
Power Dissipation-Max | 156W Tc |
Element Configuration | Single |
Turn On Delay Time | 16 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 1.25m Ω @ 100A, 10V |
Vgs(th) (Max) @ Id | 3.9V @ 150μA |
Input Capacitance (Ciss) (Max) @ Vds | 6560pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 100A Tc |
Gate Charge (Qg) (Max) @ Vgs | 190nC @ 10V |
Rise Time | 31ns |
Drain to Source Voltage (Vdss) | 40V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |