Parameters | |
---|---|
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | NO LEAD |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | R-PDSO-N5 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 156W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 156W |
Case Connection | DRAIN |
Turn On Delay Time | 13 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 3.2m Ω @ 75A, 10V |
Vgs(th) (Max) @ Id | 3.7V @ 150μA |
Input Capacitance (Ciss) (Max) @ Vds | 6460pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 100A Tc |
Gate Charge (Qg) (Max) @ Vgs | 165nC @ 10V |
Rise Time | 25ns |
Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 23 ns |
Turn-Off Delay Time | 63 ns |
Continuous Drain Current (ID) | 23A |
Threshold Voltage | 3.7V |
Gate to Source Voltage (Vgs) | 20V |
Drain-source On Resistance-Max | 0.0032Ohm |
Drain to Source Breakdown Voltage | 60V |
Pulsed Drain Current-Max (IDM) | 590A |
Avalanche Energy Rating (Eas) | 554 mJ |
Max Junction Temperature (Tj) | 150°C |
Height | 950μm |
Length | 6.15mm |
Width | 5.15mm |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-PowerVDFN |
Number of Pins | 8 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2008 |
Series | StrongIRFET™ |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 5 |
ECCN Code | EAR99 |