IRFH7185TRPBF
| Parameters | |
|---|---|
| Vgs(th) (Max) @ Id | 3.6V @ 150μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2320pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 19A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 54nC @ 10V |
| Rise Time | 9.9ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 3.9 ns |
| Factory Lead Time | 1 Week |
| Turn-Off Delay Time | 14 ns |
| Continuous Drain Current (ID) | 19A |
| Mount | Surface Mount |
| Threshold Voltage | 3.6V |
| Gate to Source Voltage (Vgs) | 20V |
| Mounting Type | Surface Mount |
| Drain-source On Resistance-Max | 0.0052Ohm |
| Package / Case | 8-PowerTDFN |
| Drain to Source Breakdown Voltage | 100V |
| Pulsed Drain Current-Max (IDM) | 260A |
| Number of Pins | 8 |
| Avalanche Energy Rating (Eas) | 360 mJ |
| Max Junction Temperature (Tj) | 150°C |
| Transistor Element Material | SILICON |
| Height | 950μm |
| Length | 6.15mm |
| Width | 5.15mm |
| Operating Temperature | -55°C~150°C TJ |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| Packaging | Tape & Reel (TR) |
| RoHS Status | RoHS Compliant |
| Published | 2008 |
| Lead Free | Lead Free |
| Series | FASTIRFET™, HEXFET® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Base Part Number | IRFH7185 |
| JESD-30 Code | R-PDSO-N5 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 3.6W Ta 160W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 3.6W |
| Case Connection | DRAIN |
| Turn On Delay Time | 6.5 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 5.2m Ω @ 50A, 10V |
See Relate Datesheet
