Parameters | |
---|---|
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 3.3m Ω @ 50A, 10V |
Vgs(th) (Max) @ Id | 3.9V @ 100μA |
Input Capacitance (Ciss) (Max) @ Vds | 3174pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 85A Tc |
Gate Charge (Qg) (Max) @ Vgs | 98nC @ 10V |
Rise Time | 37ns |
Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 26 ns |
Turn-Off Delay Time | 33 ns |
Continuous Drain Current (ID) | 85A |
Threshold Voltage | 2.2V |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 40V |
Pulsed Drain Current-Max (IDM) | 468A |
Height | 1.17mm |
Length | 5.85mm |
Width | 5mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-TQFN Exposed Pad |
Number of Pins | 5 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2008 |
Series | HEXFET®, StrongIRFET™ |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 5 |
ECCN Code | EAR99 |
Resistance | 3.3MOhm |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | FLAT |
Number of Elements | 1 |
Power Dissipation-Max | 78W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 78W |
Case Connection | DRAIN |
Turn On Delay Time | 11 ns |
FET Type | N-Channel |