Parameters | |
---|---|
Height | 950μm |
Length | 5.2324mm |
Width | 5mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-PowerTDFN |
Number of Pins | 8 |
Supplier Device Package | 8-PQFN (5x6) |
Packaging | Cut Tape (CT) |
Published | 2013 |
Series | HEXFET® |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Resistance | 4.8MOhm |
Max Operating Temperature | 150°C |
Min Operating Temperature | -55°C |
Max Power Dissipation | 3.1W |
Technology | MOSFET (Metal Oxide) |
Element Configuration | Single |
Power Dissipation | 3.1W |
Turn On Delay Time | 17 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 4.8mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id | 2.35V @ 50μA |
Input Capacitance (Ciss) (Max) @ Vds | 2360pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 20A Ta 54A Tc |
Gate Charge (Qg) (Max) @ Vgs | 26nC @ 4.5V |
Rise Time | 12ns |
Drain to Source Voltage (Vdss) | 30V |
Fall Time (Typ) | 7 ns |
Turn-Off Delay Time | 19 ns |
Continuous Drain Current (ID) | 24A |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 30V |
Input Capacitance | 2.36nF |
Recovery Time | 21 ns |
Drain to Source Resistance | 4.8mOhm |
Rds On Max | 4.8 mΩ |
Nominal Vgs | 1.8 V |