Parameters | |
---|---|
Height | 1.1684mm |
Length | 5.2324mm |
Width | 6.1468mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-PowerTDFN |
Number of Pins | 8 |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2009 |
Series | HEXFET® |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN Code | EAR99 |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Configuration | Single |
Power Dissipation-Max | 3.1W Ta |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 3.1W |
Turn On Delay Time | 17 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 4.8m Ω @ 20A, 10V |
Vgs(th) (Max) @ Id | 2.35V @ 50μA |
Input Capacitance (Ciss) (Max) @ Vds | 2360pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 20A Ta 54A Tc |
Gate Charge (Qg) (Max) @ Vgs | 26nC @ 4.5V |
Rise Time | 12ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 7 ns |
Turn-Off Delay Time | 19 ns |
Continuous Drain Current (ID) | 54A |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 76A |
Drain to Source Breakdown Voltage | 30V |