Parameters | |
---|---|
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 43A |
Drain to Source Breakdown Voltage | 30V |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-PowerTDFN |
Number of Pins | 8 |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2013 |
Series | HEXFET®, StrongIRFET™ |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN Code | EAR99 |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Configuration | Single |
Number of Channels | 1 |
Power Dissipation-Max | 3.7W Ta 156W Tc |
Power Dissipation | 3.7W |
Turn On Delay Time | 21 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 1.1m Ω @ 50A, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 150μA |
Input Capacitance (Ciss) (Max) @ Vds | 7736pF @ 24V |
Current - Continuous Drain (Id) @ 25°C | 43A Ta 100A Tc |
Gate Charge (Qg) (Max) @ Vgs | 179nC @ 10V |
Rise Time | 91ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 65 ns |
Turn-Off Delay Time | 48 ns |
Continuous Drain Current (ID) | 100A |
Threshold Voltage | 1.7V |