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IRFH8303TRPBF

MOSFET N-CH 30V 100A PQFN


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRFH8303TRPBF
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 225
  • Description: MOSFET N-CH 30V 100A PQFN (Kg)

Details

Tags

Parameters
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 43A
Drain to Source Breakdown Voltage 30V
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series HEXFET®, StrongIRFET™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Configuration Single
Number of Channels 1
Power Dissipation-Max 3.7W Ta 156W Tc
Power Dissipation 3.7W
Turn On Delay Time 21 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.1m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 2.2V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 7736pF @ 24V
Current - Continuous Drain (Id) @ 25°C 43A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 179nC @ 10V
Rise Time 91ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 65 ns
Turn-Off Delay Time 48 ns
Continuous Drain Current (ID) 100A
Threshold Voltage 1.7V
See Relate Datesheet

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