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IRFH8316TRPBF

MOSFET N-CH 30V 27A PQFN5X6


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRFH8316TRPBF
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 191
  • Description: MOSFET N-CH 30V 27A PQFN5X6 (Kg)

Details

Tags

Parameters
Packaging Tape & Reel (TR)
Published 2013
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Channels 1
Power Dissipation-Max 3.6W Ta 59W Tc
Element Configuration Single
Power Dissipation 3.6W
Turn On Delay Time 19 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.95m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 3610pF @ 10V
Current - Continuous Drain (Id) @ 25°C 27A Ta 50A Tc
Gate Charge (Qg) (Max) @ Vgs 59nC @ 10V
Rise Time 67ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 24 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 27A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 50A
Drain to Source Breakdown Voltage 30V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Operating Temperature -55°C~150°C TJ
See Relate Datesheet

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