IRFHM830TRPBF
| Parameters | |
|---|---|
| Rise Time | 25ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 9.2 ns |
| Turn-Off Delay Time | 13 ns |
| Continuous Drain Current (ID) | 21A |
| Threshold Voltage | 1.8V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 40A |
| Drain to Source Breakdown Voltage | 30V |
| Nominal Vgs | 1.8 V |
| Height | 1mm |
| Length | 3.3mm |
| Width | 3.3mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-VQFN Exposed Pad |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2010 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Resistance | 6MOhm |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| JESD-30 Code | S-PDSO-N5 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 2.7W Ta 37W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.7W |
| Case Connection | DRAIN |
| Turn On Delay Time | 12 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 3.8m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2.35V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2155pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 21A Ta 40A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 31nC @ 10V |
See Relate Datesheet
