Parameters | |
---|---|
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-PowerTDFN |
Number of Pins | 8 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2009 |
Series | HEXFET® |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 5 |
ECCN Code | EAR99 |
Resistance | 14.6MOhm |
Terminal Finish | Matte Tin (Sn) |
Subcategory | Other Transistors |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
JESD-30 Code | S-PDSO-N5 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 2.8W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.8W |
Case Connection | DRAIN |
Turn On Delay Time | 11 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 10m Ω @ 11A, 20V |
Vgs(th) (Max) @ Id | 2.4V @ 25μA |
Input Capacitance (Ciss) (Max) @ Vds | 1543pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 11A Ta 24A Tc |
Gate Charge (Qg) (Max) @ Vgs | 48nC @ 10V |
Rise Time | 27ns |
Drain to Source Voltage (Vdss) | 30V |
Drive Voltage (Max Rds On,Min Rds On) | 10V 20V |
Vgs (Max) | ±25V |
Fall Time (Typ) | 60 ns |
Turn-Off Delay Time | 72 ns |
Continuous Drain Current (ID) | -11A |
Threshold Voltage | -1.8V |
Gate to Source Voltage (Vgs) | 25V |
Drain Current-Max (Abs) (ID) | 24A |
Drain to Source Breakdown Voltage | -30V |
Pulsed Drain Current-Max (IDM) | 90A |
Avalanche Energy Rating (Eas) | 76 mJ |
Max Junction Temperature (Tj) | 150°C |
Height | 1mm |
Length | 2.9972mm |
Width | 2.9972mm |
Radiation Hardening | No |