Parameters | |
---|---|
Published | 1997 |
Series | HEXFET® |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Termination | Through Hole |
ECCN Code | EAR99 |
Resistance | 8mOhm |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 55V |
Technology | MOSFET (Metal Oxide) |
Current Rating | 64A |
Number of Elements | 1 |
Power Dissipation-Max | 63W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 63W |
Case Connection | ISOLATED |
Turn On Delay Time | 14 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 8m Ω @ 34A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 4000pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 64A Tc |
Gate Charge (Qg) (Max) @ Vgs | 170nC @ 10V |
Rise Time | 100ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 70 ns |
Turn-Off Delay Time | 43 ns |
Continuous Drain Current (ID) | 64A |
Threshold Voltage | 4V |
JEDEC-95 Code | TO-220AB |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 56A |
Drain to Source Breakdown Voltage | 55V |
Dual Supply Voltage | 55V |
Avalanche Energy Rating (Eas) | 480 mJ |
Recovery Time | 170 ns |
Isolation Voltage | 2kV |
Nominal Vgs | 4 V |
Height | 9.8mm |
Length | 10.7442mm |
Width | 4.826mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 Full Pack |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |