Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 Full Pack |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -40°C~150°C TJ |
Packaging | Tube |
Published | 2006 |
Series | HEXFET® |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Resistance | 16MOhm |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 150V |
Technology | MOSFET (Metal Oxide) |
Current Rating | 34A |
Number of Elements | 1 |
Power Dissipation-Max | 46W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 46W |
Case Connection | DRAIN |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 16m Ω @ 20A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 4560pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 34A Tc |
Gate Charge (Qg) (Max) @ Vgs | 110nC @ 10V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±30V |
Continuous Drain Current (ID) | 34A |
JEDEC-95 Code | TO-220AB |
Gate to Source Voltage (Vgs) | 30V |
Drain to Source Breakdown Voltage | 150V |
Height | 9.8mm |
Length | 10.6172mm |
Width | 4.826mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |