Parameters | |
---|---|
Power Dissipation | 46W |
Turn On Delay Time | 18 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 16m Ω @ 20A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 4440pF @ 50V |
Current - Continuous Drain (Id) @ 25°C | 34A Tc |
Gate Charge (Qg) (Max) @ Vgs | 110nC @ 10V |
Rise Time | 29ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±30V |
Fall Time (Typ) | 20 ns |
Turn-Off Delay Time | 27 ns |
Continuous Drain Current (ID) | 34A |
Threshold Voltage | 5V |
JEDEC-95 Code | TO-220AB |
Gate to Source Voltage (Vgs) | 30V |
Drain to Source Breakdown Voltage | 150V |
Height | 9.8mm |
Length | 10.6172mm |
Width | 4.826mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 Full Pack |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2006 |
Series | HEXFET® |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | MATTE TIN OVER NICKEL |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 150V |
Technology | MOSFET (Metal Oxide) |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 34A |
Time@Peak Reflow Temperature-Max (s) | 40 |
Number of Elements | 1 |
Power Dissipation-Max | 46W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |