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IRFI510GPBF

MOSFET N-CH 100V 4.5A TO220FP


  • Manufacturer: Vishay Siliconix
  • Nocochips NO: 880-IRFI510GPBF
  • Package: TO-220-3 Full Pack, Isolated Tab
  • Datasheet: PDF
  • Stock: 973
  • Description: MOSFET N-CH 100V 4.5A TO220FP (Kg)

Details

Tags

Parameters
Turn On Delay Time 6.9 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 540mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 180pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.5A Tc
Gate Charge (Qg) (Max) @ Vgs 8.3nC @ 10V
Rise Time 16ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 9.4 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 4.5A
Factory Lead Time 1 Week
Threshold Voltage 4V
Mount Through Hole
Gate to Source Voltage (Vgs) 20V
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack, Isolated Tab
Input Capacitance 180pF
Number of Pins 3
Drain to Source Resistance 540mOhm
Supplier Device Package TO-220-3
Weight 6.000006g
Rds On Max 540 mΩ
Operating Temperature -55°C~175°C TJ
Packaging Tube
Nominal Vgs 4 V
Published 2017
Height 9.8mm
Part Status Active
Length 10.63mm
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Width 4.83mm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Radiation Hardening No
Technology MOSFET (Metal Oxide)
REACH SVHC No SVHC
Number of Elements 1
Number of Channels 1
RoHS Status ROHS3 Compliant
Power Dissipation-Max 27W Tc
Element Configuration Single
Power Dissipation 27W
See Relate Datesheet

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