Parameters | |
---|---|
Rise Time | 39ns |
Packaging | Tube |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Published | 1998 |
Vgs (Max) | ±20V |
Series | HEXFET® |
Fall Time (Typ) | 33 ns |
Turn-Off Delay Time | 44 ns |
Continuous Drain Current (ID) | 20A |
JESD-609 Code | e3 |
Threshold Voltage | 4V |
Part Status | Active |
JEDEC-95 Code | TO-220AB |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Gate to Source Voltage (Vgs) | 20V |
Number of Terminations | 3 |
Drain-source On Resistance-Max | 0.052Ohm |
Drain to Source Breakdown Voltage | 100V |
Termination | Through Hole |
Dual Supply Voltage | 100V |
Recovery Time | 250 ns |
Isolation Voltage | 2.5kV |
ECCN Code | EAR99 |
Nominal Vgs | 4 V |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
Height | 9.8mm |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY |
Length | 10.6172mm |
Subcategory | FET General Purpose Power |
Width | 4.826mm |
Voltage - Rated DC | 100V |
Radiation Hardening | No |
Technology | MOSFET (Metal Oxide) |
REACH SVHC | No SVHC |
Peak Reflow Temperature (Cel) | 260 |
RoHS Status | ROHS3 Compliant |
Current Rating | 20A |
Lead Free | Lead Free |
Time@Peak Reflow Temperature-Max (s) | 40 |
Number of Elements | 1 |
Power Dissipation-Max | 54W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 42W |
Case Connection | ISOLATED |
Turn On Delay Time | 8.2 ns |
Factory Lead Time | 1 Week |
FET Type | N-Channel |
Mount | Through Hole |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 52m Ω @ 11A, 10V |
Mounting Type | Through Hole |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Package / Case | TO-220-3 Full Pack |
Input Capacitance (Ciss) (Max) @ Vds | 1400pF @ 25V |
Number of Pins | 3 |
Current - Continuous Drain (Id) @ 25°C | 20A Tc |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Gate Charge (Qg) (Max) @ Vgs | 94nC @ 10V |