Parameters | |
---|---|
Technology | MOSFET (Metal Oxide) |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Power Dissipation-Max | 40.5W Tc |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 3.3m Ω @ 48A, 10V |
Vgs(th) (Max) @ Id | 3.9V @ 100μA |
Input Capacitance (Ciss) (Max) @ Vds | 3199pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 80A Tc |
Gate Charge (Qg) (Max) @ Vgs | 90nC @ 10V |
Drain to Source Voltage (Vdss) | 40V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Continuous Drain Current (ID) | 80A |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 Full Pack |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2013 |
Series | HEXFET®, StrongIRFET™ |
Part Status | Not For New Designs |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN Code | EAR99 |