Parameters | |
---|---|
Time@Peak Reflow Temperature-Max (s) | 30 |
JESD-30 Code | R-PDSO-G4 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 1W Ta |
Factory Lead Time | 1 Week |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
Mounting Type | Surface Mount |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 75m Ω @ 2.8A, 10V |
Package / Case | TO-261-4, TO-261AA |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Surface Mount | YES |
Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 2.8A Ta |
Transistor Element Material | SILICON |
Gate Charge (Qg) (Max) @ Vgs | 18.3nC @ 10V |
Drain to Source Voltage (Vdss) | 55V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Operating Temperature | -55°C~150°C TJ |
Vgs (Max) | ±20V |
Drain Current-Max (Abs) (ID) | 2.8A |
Packaging | Tube |
Drain-source On Resistance-Max | 0.075Ohm |
DS Breakdown Voltage-Min | 55V |
Published | 1999 |
Series | HEXFET® |
RoHS Status | ROHS3 Compliant |
JESD-609 Code | e3 |
Part Status | Discontinued |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Additional Feature | AVALANCHE RATED |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Reach Compliance Code | not_compliant |