Parameters | |
---|---|
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-261-4, TO-261AA |
Number of Pins | 3 |
Supplier Device Package | SOT-223 |
Weight | 250.212891mg |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2012 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Resistance | 540mOhm |
Max Operating Temperature | 150°C |
Min Operating Temperature | -55°C |
Technology | MOSFET (Metal Oxide) |
Number of Elements | 1 |
Number of Channels | 1 |
Voltage | 100V |
Power Dissipation-Max | 2W Ta 3.1W Tc |
Element Configuration | Single |
Current | 15A |
Power Dissipation | 3.1W |
Turn On Delay Time | 6.9 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 540mOhm @ 900mA, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 180pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 1.5A Tc |
Gate Charge (Qg) (Max) @ Vgs | 8.3nC @ 10V |
Rise Time | 16ns |
Drain to Source Voltage (Vdss) | 100V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 9.4 ns |
Turn-Off Delay Time | 15 ns |
Continuous Drain Current (ID) | 1.5A |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 100V |
Input Capacitance | 180pF |
Max Junction Temperature (Tj) | 150°C |
Drain to Source Resistance | 540mOhm |
Rds On Max | 540 mΩ |
Height | 1.8mm |
Length | 6.7mm |
Width | 3.7mm |
Radiation Hardening | No |
REACH SVHC | Unknown |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |