IRFL4310PBF
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 1999 |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | HIGH RELIABILITY |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| JESD-30 Code | R-PDSO-G4 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 1W Ta |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Input Capacitance (Ciss) (Max) @ Vds | 330pF @ 100kHz |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 100kHz |
| Drain to Source Voltage (Vdss) | 100V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain Current-Max (Abs) (ID) | 1.6A |
| Drain-source On Resistance-Max | 0.2Ohm |
| DS Breakdown Voltage-Min | 100V |
| RoHS Status | RoHS Compliant |
See Relate Datesheet
