IRFL9014TRPBF
| Parameters | |
|---|---|
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| Rise Time | 63ns |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 31 ns |
| Turn-Off Delay Time | 9.6 ns |
| Continuous Drain Current (ID) | -1.8A |
| Threshold Voltage | -2V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | -60V |
| Max Junction Temperature (Tj) | 150°C |
| Height | 1.8mm |
| Length | 6.7mm |
| Width | 3.7mm |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 4 |
| Weight | 250.212891mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Resistance | 500mOhm |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | AVALANCHE RATED |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 4 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Power Dissipation-Max | 2W Ta 3.1W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| Case Connection | DRAIN |
| Turn On Delay Time | 11 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 500m Ω @ 1.1A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 270pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 1.8A Tc |
See Relate Datesheet
