Parameters | |
---|---|
Technology | MOSFET (Metal Oxide) |
Peak Reflow Temperature (Cel) | 250 |
Current Rating | 53A |
Time@Peak Reflow Temperature-Max (s) | 30 |
Lead Pitch | 5.45mm |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 120W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 100W |
Case Connection | DRAIN |
Turn On Delay Time | 12 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 20m Ω @ 29A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1500pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 53A Tc |
Gate Charge (Qg) (Max) @ Vgs | 61nC @ 10V |
Rise Time | 80ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 52 ns |
Turn-Off Delay Time | 43 ns |
Continuous Drain Current (ID) | 53A |
Threshold Voltage | 4V |
JEDEC-95 Code | TO-247AC |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 49A |
Drain-source On Resistance-Max | 0.02Ohm |
Drain to Source Breakdown Voltage | 55V |
Dual Supply Voltage | 55V |
Recovery Time | 110 ns |
Nominal Vgs | 4 V |
Height | 20.7mm |
Length | 15.87mm |
Width | 5.3086mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Bulk |
Published | 1997 |
Series | HEXFET® |
JESD-609 Code | e3 |
Part Status | Not For New Designs |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 55V |