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IRFP22N50APBF

MOSFET N-CH 500V 22A TO-247AC


  • Manufacturer: Vishay Siliconix
  • Nocochips NO: 880-IRFP22N50APBF
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 958
  • Description: MOSFET N-CH 500V 22A TO-247AC (Kg)

Details

Tags

Parameters
Fall Time (Typ) 47 ns
Turn-Off Delay Time 47 ns
Continuous Drain Current (ID) 22A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 500V
Input Capacitance 3.45nF
Recovery Time 850 ns
Drain to Source Resistance 230mOhm
Rds On Max 230 mΩ
Nominal Vgs 2 V
Height 20.7mm
Length 15.87mm
Width 5.31mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Supplier Device Package TO-247-3
Weight 38.000013g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 230mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 500V
Technology MOSFET (Metal Oxide)
Current Rating 22A
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 277W Tc
Element Configuration Single
Power Dissipation 277W
Turn On Delay Time 26 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 230mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3450pF @ 25V
Current - Continuous Drain (Id) @ 25°C 22A Tc
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
Rise Time 94ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
See Relate Datesheet

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