Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Bulk |
Published | 2004 |
Series | HEXFET® |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Termination | Through Hole |
ECCN Code | EAR99 |
Resistance | 40mOhm |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 200V |
Technology | MOSFET (Metal Oxide) |
Peak Reflow Temperature (Cel) | 250 |
Current Rating | 50A |
Time@Peak Reflow Temperature-Max (s) | 30 |
Number of Elements | 1 |
Power Dissipation-Max | 300W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 300W |
Case Connection | DRAIN |
Turn On Delay Time | 17 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 40m Ω @ 28A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 4057pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 50A Tc |
Gate Charge (Qg) (Max) @ Vgs | 234nC @ 10V |
Rise Time | 60ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 48 ns |
Turn-Off Delay Time | 55 ns |
Continuous Drain Current (ID) | 50A |
Threshold Voltage | 4V |
JEDEC-95 Code | TO-247AC |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 200V |
Pulsed Drain Current-Max (IDM) | 200A |
Dual Supply Voltage | 200V |
Avalanche Energy Rating (Eas) | 560 mJ |
Recovery Time | 402 ns |
Nominal Vgs | 4 V |
Height | 20.2946mm |
Length | 15.875mm |
Width | 5.3mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Contains Lead, Lead Free |