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IRFP3703PBF

MOSFET N-CH 30V 210A TO-247AC


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRFP3703PBF
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 575
  • Description: MOSFET N-CH 30V 210A TO-247AC (Kg)

Details

Tags

Parameters
Power Dissipation-Max 3.8W Ta 230W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 230W
Case Connection DRAIN
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.8m Ω @ 76A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 8250pF @ 25V
Current - Continuous Drain (Id) @ 25°C 210A Tc
Gate Charge (Qg) (Max) @ Vgs 209nC @ 10V
Rise Time 123ns
Drive Voltage (Max Rds On,Min Rds On) 7V 10V
Vgs (Max) ±20V
Fall Time (Typ) 24 ns
Turn-Off Delay Time 53 ns
Continuous Drain Current (ID) 210A
JEDEC-95 Code TO-247AC
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 90A
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
Recovery Time 120 ns
Nominal Vgs 4 V
Height 20.7mm
Length 15.87mm
Width 5.3086mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Bulk
Published 2001
Series HEXFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Additional Feature AVALANCHE RATED, ULTRA LOW RESISTANCE
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Current Rating 210A
Number of Elements 1
See Relate Datesheet

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