Parameters | |
---|---|
Power Dissipation-Max | 3.8W Ta 230W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 230W |
Case Connection | DRAIN |
Turn On Delay Time | 18 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 2.8m Ω @ 76A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 8250pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 210A Tc |
Gate Charge (Qg) (Max) @ Vgs | 209nC @ 10V |
Rise Time | 123ns |
Drive Voltage (Max Rds On,Min Rds On) | 7V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 24 ns |
Turn-Off Delay Time | 53 ns |
Continuous Drain Current (ID) | 210A |
JEDEC-95 Code | TO-247AC |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 90A |
Drain to Source Breakdown Voltage | 30V |
Dual Supply Voltage | 30V |
Recovery Time | 120 ns |
Nominal Vgs | 4 V |
Height | 20.7mm |
Length | 15.87mm |
Width | 5.3086mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Bulk |
Published | 2001 |
Series | HEXFET® |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Termination | Through Hole |
ECCN Code | EAR99 |
Additional Feature | AVALANCHE RATED, ULTRA LOW RESISTANCE |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 30V |
Technology | MOSFET (Metal Oxide) |
Current Rating | 210A |
Number of Elements | 1 |