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IRFP4110PBF

IRFP4110PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRFP4110PBF
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 983
  • Description: IRFP4110PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
Fall Time (Typ) 88 ns
Turn-Off Delay Time 78 ns
Continuous Drain Current (ID) 180A
Threshold Voltage 4V
JEDEC-95 Code TO-247AC
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 670A
Dual Supply Voltage 100V
Recovery Time 75 ns
Nominal Vgs 4 V
Height 20.7mm
Length 15.87mm
Width 5.3086mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
Series HEXFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Resistance 4.5MOhm
Terminal Finish MATTE TIN OVER NICKEL
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 250
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 1
Power Dissipation-Max 370W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 370W
Case Connection DRAIN
Turn On Delay Time 25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.5m Ω @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 9620pF @ 50V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 210nC @ 10V
Rise Time 67ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
See Relate Datesheet

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