Parameters | |
---|---|
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 190W |
Turn On Delay Time | 17 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 400m Ω @ 8.4A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 2600pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 14A Tc |
Gate Charge (Qg) (Max) @ Vgs | 150nC @ 10V |
Rise Time | 47ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 44 ns |
Turn-Off Delay Time | 92 ns |
Continuous Drain Current (ID) | 14A |
Threshold Voltage | 4V |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 500V |
Pulsed Drain Current-Max (IDM) | 56A |
Dual Supply Voltage | 500V |
Avalanche Energy Rating (Eas) | 760 mJ |
Recovery Time | 810 ns |
Max Junction Temperature (Tj) | 150°C |
Nominal Vgs | 2 V |
Height | 24.86mm |
Length | 15.87mm |
Width | 5.31mm |
Radiation Hardening | No |
REACH SVHC | Unknown |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Number of Pins | 3 |
Weight | 38.000013g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2011 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Termination | Through Hole |
Resistance | 400mOhm |
Additional Feature | AVALANCHE RATED |
Voltage - Rated DC | 500V |
Technology | MOSFET (Metal Oxide) |
Current Rating | 14A |
Pin Count | 3 |
Lead Pitch | 5.45mm |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 190W Tc |
Element Configuration | Single |