Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2008 |
Series | HEXFET® |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Termination | Through Hole |
ECCN Code | EAR99 |
Terminal Finish | MATTE TIN OVER NICKEL |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Peak Reflow Temperature (Cel) | 250 |
Time@Peak Reflow Temperature-Max (s) | 30 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 517W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 517W |
Case Connection | DRAIN |
Turn On Delay Time | 27 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 5.9m Ω @ 103A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 10470pF @ 50V |
Current - Continuous Drain (Id) @ 25°C | 171A Tc |
Gate Charge (Qg) (Max) @ Vgs | 227nC @ 10V |
Rise Time | 119ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±30V |
Fall Time (Typ) | 84 ns |
Turn-Off Delay Time | 47 ns |
Continuous Drain Current (ID) | 171A |
Threshold Voltage | 5V |
JEDEC-95 Code | TO-247AC |
Gate to Source Voltage (Vgs) | 30V |
Drain-source On Resistance-Max | 0.0059Ohm |
Drain to Source Breakdown Voltage | 150V |
Pulsed Drain Current-Max (IDM) | 684A |
Dual Supply Voltage | 150V |
Max Junction Temperature (Tj) | 175°C |
Nominal Vgs | 5 V |
Height | 24.99mm |
Length | 15.87mm |
Width | 5.3086mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |