IRFP4668PBF
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2008 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Termination | Through Hole |
| ECCN Code | EAR99 |
| Resistance | 9.7MOhm |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | 250 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 520W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 520W |
| Case Connection | DRAIN |
| Turn On Delay Time | 41 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 9.7m Ω @ 81A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 10720pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 130A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 241nC @ 10V |
| Rise Time | 105ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 74 ns |
| Turn-Off Delay Time | 64 ns |
| Continuous Drain Current (ID) | 130A |
| Threshold Voltage | 5V |
| JEDEC-95 Code | TO-247AC |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | 200V |
| Pulsed Drain Current-Max (IDM) | 520A |
| Dual Supply Voltage | 200V |
| Avalanche Energy Rating (Eas) | 760 mJ |
| Max Junction Temperature (Tj) | 175°C |
| Nominal Vgs | 5 V |
| Height | 24.99mm |
| Length | 15.87mm |
| Width | 5.3086mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
