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IRFP7530PBF

IRFP7530PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRFP7530PBF
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 787
  • Description: IRFP7530PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

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Parameters
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Channels 1
Power Dissipation-Max 341W Tc
Element Configuration Single
Power Dissipation 341W
Turn On Delay Time 52 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 3.7V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 13703pF @ 25V
Current - Continuous Drain (Id) @ 25°C 195A Tc
Gate Charge (Qg) (Max) @ Vgs 411nC @ 10V
Rise Time 141ns
Drain to Source Voltage (Vdss) 60V
Factory Lead Time 1 Week
Mount Through Hole
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Mounting Type Through Hole
Vgs (Max) ±20V
Package / Case TO-247-3
Fall Time (Typ) 104 ns
Number of Pins 3
Turn-Off Delay Time 172 ns
Weight 38.000013g
Continuous Drain Current (ID) 195A
Operating Temperature -55°C~175°C TJ
Threshold Voltage 3.7V
Packaging Tube
Gate to Source Voltage (Vgs) 20V
Published 2013
Height 20.7mm
Series HEXFET®, StrongIRFET™
Length 15.87mm
Part Status Active
Width 5.31mm
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
ECCN Code EAR99
Lead Free Lead Free
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
See Relate Datesheet

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