Parameters | |
---|---|
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Number of Channels | 1 |
Power Dissipation-Max | 341W Tc |
Element Configuration | Single |
Power Dissipation | 341W |
Turn On Delay Time | 52 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 2m Ω @ 100A, 10V |
Vgs(th) (Max) @ Id | 3.7V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 13703pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 195A Tc |
Gate Charge (Qg) (Max) @ Vgs | 411nC @ 10V |
Rise Time | 141ns |
Drain to Source Voltage (Vdss) | 60V |
Factory Lead Time | 1 Week |
Mount | Through Hole |
Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
Mounting Type | Through Hole |
Vgs (Max) | ±20V |
Package / Case | TO-247-3 |
Fall Time (Typ) | 104 ns |
Number of Pins | 3 |
Turn-Off Delay Time | 172 ns |
Weight | 38.000013g |
Continuous Drain Current (ID) | 195A |
Operating Temperature | -55°C~175°C TJ |
Threshold Voltage | 3.7V |
Packaging | Tube |
Gate to Source Voltage (Vgs) | 20V |
Published | 2013 |
Height | 20.7mm |
Series | HEXFET®, StrongIRFET™ |
Length | 15.87mm |
Part Status | Active |
Width | 5.31mm |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
ECCN Code | EAR99 |
Lead Free | Lead Free |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |