Parameters | |
---|---|
Current Rating | 5.4A |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 3 |
Lead Free | Lead Free |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 150W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 150W |
Case Connection | DRAIN |
Turn On Delay Time | 16 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 2 Ω @ 3.2A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1900pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 5.4A Tc |
Gate Charge (Qg) (Max) @ Vgs | 130nC @ 10V |
Rise Time | 36ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 32 ns |
Turn-Off Delay Time | 100 ns |
Continuous Drain Current (ID) | 5.4A |
JEDEC-95 Code | TO-247AC |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 800V |
Pulsed Drain Current-Max (IDM) | 22A |
Avalanche Energy Rating (Eas) | 490 mJ |
Recovery Time | 830 ns |
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Nominal Vgs | 4 V |
Package / Case | TO-247-3 |
Number of Pins | 3 |
Weight | 38.000013g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
JESD-609 Code | e3 |
Height | 20.7mm |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Length | 15.87mm |
Number of Terminations | 3 |
Resistance | 2Ohm |
Width | 5.31mm |
Terminal Finish | Matte Tin (Sn) |
Additional Feature | AVALANCHE RATED |
Subcategory | FET General Purpose Power |
Radiation Hardening | No |
Voltage - Rated DC | 800V |
Technology | MOSFET (Metal Oxide) |
Peak Reflow Temperature (Cel) | 260 |
RoHS Status | ROHS3 Compliant |