Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Number of Pins | 3 |
Weight | 1.437803g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2013 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 25W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Turn On Delay Time | 10 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 200m Ω @ 4.6A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 250pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 8.2A Tc |
Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V |
Rise Time | 50ns |
Drain to Source Voltage (Vdss) | 50V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 19 ns |
Turn-Off Delay Time | 13 ns |
Continuous Drain Current (ID) | 8.2A |
JEDEC-95 Code | TO-252AA |
Gate to Source Voltage (Vgs) | 20V |
Drain-source On Resistance-Max | 0.2Ohm |
Drain to Source Breakdown Voltage | 60V |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |