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IRFR13N15DTRPBF

MOSFET N-CH 150V 14A DPAK


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRFR13N15DTRPBF
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 632
  • Description: MOSFET N-CH 150V 14A DPAK (Kg)

Details

Tags

Parameters
Current - Continuous Drain (Id) @ 25°C 14A Tc
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Rise Time 26ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 11 ns
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) 14A
Threshold Voltage 5.5V
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 150V
Pulsed Drain Current-Max (IDM) 56A
Dual Supply Voltage 150V
Nominal Vgs 5.5 V
Height 2.3876mm
Length 6.7056mm
Width 6.22mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series HEXFET®
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 180mOhm
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory FET General Purpose Power
Voltage - Rated DC 150V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 14A
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 86W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 86W
Case Connection DRAIN
Turn On Delay Time 8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 180m Ω @ 8.3A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 620pF @ 25V
See Relate Datesheet

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