Parameters | |
---|---|
Power Dissipation-Max | 3W Ta 140W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 3W |
Case Connection | DRAIN |
Turn On Delay Time | 9.7 ns |
Factory Lead Time | 1 Week |
FET Type | N-Channel |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Transistor Application | SWITCHING |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Rds On (Max) @ Id, Vgs | 165m Ω @ 10A, 10V |
Number of Pins | 3 |
Vgs(th) (Max) @ Id | 5.5V @ 250μA |
Transistor Element Material | SILICON |
Input Capacitance (Ciss) (Max) @ Vds | 910pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 17A Tc |
Operating Temperature | -55°C~175°C TJ |
Gate Charge (Qg) (Max) @ Vgs | 41nC @ 10V |
Packaging | Tape & Reel (TR) |
Rise Time | 32ns |
Published | 2005 |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±30V |
Series | HEXFET® |
Fall Time (Typ) | 8.9 ns |
JESD-609 Code | e3 |
Part Status | Active |
Turn-Off Delay Time | 17 ns |
Continuous Drain Current (ID) | 17A |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
Threshold Voltage | 5.5V |
ECCN Code | EAR99 |
Resistance | 165Ohm |
JEDEC-95 Code | TO-252AA |
Gate to Source Voltage (Vgs) | 30V |
Drain to Source Breakdown Voltage | 200V |
Pulsed Drain Current-Max (IDM) | 68A |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
Dual Supply Voltage | 200V |
Subcategory | FET General Purpose Power |
Avalanche Energy Rating (Eas) | 260 mJ |
Voltage - Rated DC | 200V |
Max Junction Temperature (Tj) | 175°C |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Nominal Vgs | 5.5 V |
Height | 2.52mm |
Peak Reflow Temperature (Cel) | 260 |
Length | 6.7056mm |
Width | 6.22mm |
Radiation Hardening | No |
Current Rating | 17A |
Time@Peak Reflow Temperature-Max (s) | 30 |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Number of Channels | 1 |