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IRFR18N15DTRPBF

MOSFET N-CH 150V 18A DPAK


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRFR18N15DTRPBF
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 572
  • Description: MOSFET N-CH 150V 18A DPAK (Kg)

Details

Tags

Parameters
Subcategory FET General Purpose Power
Voltage - Rated DC 150V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 18A
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 110W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 110W
Case Connection DRAIN
Turn On Delay Time 8.8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 125m Ω @ 11A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 900pF @ 25V
Current - Continuous Drain (Id) @ 25°C 18A Tc
Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V
Rise Time 25ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 9.8 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 18A
Threshold Voltage 5.5V
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 150V
Pulsed Drain Current-Max (IDM) 72A
Dual Supply Voltage 150V
Avalanche Energy Rating (Eas) 200 mJ
Nominal Vgs 5.5 V
Height 2.3876mm
Length 6.7056mm
Width 6.22mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series HEXFET®
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 125mOhm
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
See Relate Datesheet

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