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IRFR2905ZTRPBF

MOSFET N-CH 55V 42A DPAK


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRFR2905ZTRPBF
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 470
  • Description: MOSFET N-CH 55V 42A DPAK (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series HEXFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 14.5MOhm
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Voltage - Rated DC 55V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 42A
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 110W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 110W
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 14.5m Ω @ 36A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1380pF @ 25V
Current - Continuous Drain (Id) @ 25°C 42A Tc
Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V
Rise Time 66ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 35 ns
Turn-Off Delay Time 31 ns
Continuous Drain Current (ID) 59A
Threshold Voltage 4V
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 55V
Pulsed Drain Current-Max (IDM) 240A
Avalanche Energy Rating (Eas) 82 mJ
Max Junction Temperature (Tj) 175°C
Nominal Vgs 4 V
Height 2.39mm
Length 6.7056mm
Width 6.22mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free
See Relate Datesheet

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