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IRFR420APBF

Trans MOSFET N-CH 500V 3.3A 3-Pin(2+Tab) DPAK


  • Manufacturer: Vishay Siliconix
  • Nocochips NO: 880-IRFR420APBF
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 492
  • Description: Trans MOSFET N-CH 500V 3.3A 3-Pin(2+Tab) DPAK (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 1.437803g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2006
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Resistance 300mOhm
Terminal Finish MATTE TIN
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 83W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 83W
Case Connection DRAIN
Turn On Delay Time 8.1 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3 Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 340pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3.3A Tc
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Rise Time 12ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) 3.3A
Threshold Voltage 4.5V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 500V
Height 2.39mm
Length 6.73mm
Width 6.22mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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