Parameters | |
---|---|
Height | 1.778mm |
Length | 6.7056mm |
Width | 6.22mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
Contact Plating | Tin |
Mount | Surface Mount |
RoHS Status | ROHS3 Compliant |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Number of Pins | 3 |
Operating Temperature | -55°C~175°C TJ |
Lead Free | Lead Free |
Packaging | Tube |
Published | 2004 |
Series | HEXFET® |
Part Status | Discontinued |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Termination | SMD/SMT |
ECCN Code | EAR99 |
Resistance | 42MOhm |
Technology | MOSFET (Metal Oxide) |
Number of Elements | 1 |
Power Dissipation-Max | 144W Tc |
Element Configuration | Single |
Power Dissipation | 144W |
Turn On Delay Time | 15 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 42m Ω @ 21A, 10V |
Vgs(th) (Max) @ Id | 5V @ 100μA |
Input Capacitance (Ciss) (Max) @ Vds | 1750pF @ 50V |
Current - Continuous Drain (Id) @ 25°C | 33A Tc |
Gate Charge (Qg) (Max) @ Vgs | 26nC @ 10V |
Rise Time | 35ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 20 ns |
Turn-Off Delay Time | 25 ns |
Continuous Drain Current (ID) | 33A |
Threshold Voltage | 5V |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 150V |
Dual Supply Voltage | 150V |
Nominal Vgs | 5 V |