Parameters | |
---|---|
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 35 ns |
Turn-Off Delay Time | 40 ns |
Continuous Drain Current (ID) | 42A |
Threshold Voltage | 4V |
Gate to Source Voltage (Vgs) | 20V |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Drain to Source Breakdown Voltage | 55V |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Number of Pins | 3 |
Operating Temperature | -55°C~175°C TJ |
Dual Supply Voltage | 55V |
Packaging | Tube |
Recovery Time | 40 ns |
Published | 2004 |
Series | HEXFET® |
Nominal Vgs | 4 V |
Part Status | Discontinued |
Height | 2.3876mm |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Length | 10.3886mm |
Termination | SMD/SMT |
Width | 6.73mm |
ECCN Code | EAR99 |
Radiation Hardening | No |
Resistance | 11MOhm |
Voltage - Rated DC | 55V |
REACH SVHC | No SVHC |
Technology | MOSFET (Metal Oxide) |
RoHS Status | ROHS3 Compliant |
Current Rating | 62A |
Number of Elements | 1 |
Lead Free | Lead Free |
Power Dissipation-Max | 91W Tc |
Element Configuration | Single |
Power Dissipation | 91W |
Turn On Delay Time | 15 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 11m Ω @ 37A, 10V |
Vgs(th) (Max) @ Id | 4V @ 50μA |
Input Capacitance (Ciss) (Max) @ Vds | 1720pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 42A Tc |
Gate Charge (Qg) (Max) @ Vgs | 60nC @ 10V |
Rise Time | 61ns |