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IRFR48ZPBF

IRFR48ZPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRFR48ZPBF
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 614
  • Description: IRFR48ZPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

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Parameters
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 35 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 42A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Drain to Source Breakdown Voltage 55V
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Dual Supply Voltage 55V
Packaging Tube
Recovery Time 40 ns
Published 2004
Series HEXFET®
Nominal Vgs 4 V
Part Status Discontinued
Height 2.3876mm
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Length 10.3886mm
Termination SMD/SMT
Width 6.73mm
ECCN Code EAR99
Radiation Hardening No
Resistance 11MOhm
Voltage - Rated DC 55V
REACH SVHC No SVHC
Technology MOSFET (Metal Oxide)
RoHS Status ROHS3 Compliant
Current Rating 62A
Number of Elements 1
Lead Free Lead Free
Power Dissipation-Max 91W Tc
Element Configuration Single
Power Dissipation 91W
Turn On Delay Time 15 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 11m Ω @ 37A, 10V
Vgs(th) (Max) @ Id 4V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 1720pF @ 25V
Current - Continuous Drain (Id) @ 25°C 42A Tc
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Rise Time 61ns
See Relate Datesheet

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