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IRFR5305PBF

IRFR5305PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRFR5305PBF
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 694
  • Description: IRFR5305PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2000
Series HEXFET®
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
HTS Code 8541.29.00.95
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 110W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 65m Ω @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 31A Tc
Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-252AA
Drain Current-Max (Abs) (ID) 31A
Drain-source On Resistance-Max 0.065Ohm
Pulsed Drain Current-Max (IDM) 110A
DS Breakdown Voltage-Min 55V
Avalanche Energy Rating (Eas) 280 mJ
RoHS Status ROHS3 Compliant
See Relate Datesheet

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